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| SII200N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol VCES IC ICRM VGES Ptot TVj,(Tstg) Visol RthJC RthJCD o TC = 25oC, unless otherwise specified Conditions Values 1200 290(200) 580(400) _ +20 1400 _ 40...+125(150) 2500 _ 0.09 < o Units V A A V W C TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg AC, 1min V K/W _ < 0.18 Sirectifier R SII200N12 NPT IGBT Modules Electeical Characteristics Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =8mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =200A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres gfs VCE=20V, IC=200A Switching Characteristics td(on) VCC = 600V, IC = 200A tr RGon = RGoff =4.7 , Tj = 125oC td(off) VGE = 15V tf FWD under following conditions: VF IF = 200A, VGE = 0V, Tj = 25(125)oC trr IF=200A, VR= _600V,VGE=0V,di/dt=_ 2000A/us,Tj = 125oC _ IF = 200A, VGE = 0V, VR= 600V Qrr _2000A/us, Tj = 25(125)oC di/dt= Ms Mt w to heatsink M6 to terminals M5 3 2.5 TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 3(12) 2.5(3.1) 13 2 1 108 max. 6.5 4 400 3(3.7) Units V mA nA V nF S 110 80 550 80 2(1.8) 0.5 12(36) 220 160 800 120 2.5 ns V us uC Mechanical Data 5 5 325 Nm Nm g Sirectifier R SII200N12 NPT IGBT Modules Power dissipation Ptot = (TC) parameter: Tj 150 C 1500 W 1300 Ptot 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 160 10 0 0 10 10 ms 1 ms Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 t = 49.0s p A IC 10 2 100 s 10 1 10 1 10 2 DC 3 10 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 300 A 260 IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W 10 -1 IGBT ZthJC 10 -2 D = 0.50 10 -3 0.20 0.10 0.05 10 -4 0.02 single pulse 0.01 20 40 60 80 100 120 C 160 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Sirectifier R SII200N12 NPT IGBT Modules T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 s , T j = 25 C 400 T yp. output c harac teris tic s I C = f (V C E ) parameter: tp = 80 s , T j = 125 C 400 A IC 300 17V 15V 13V 11V 9V 7V A IC 300 17V 15V 13V 11V 9V 7V 250 250 200 200 150 150 100 100 50 0 0 1 2 3 V 5 50 0 0 1 2 3 V 5 VC E VCE T yp. trans fer c harac teris tic s I C = f (V G E ) parameter: tp = 80 s , V C E = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE Sirectifier R SII200N12 NPT IGBT Modules Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A 20 V nF VGE 16 14 12 10 8 10 0 6 4 2 0 0 200 400 600 800 1000 nC 1400 10 -1 0 600 V 800 V T yp. c apac itanc es C = f (V C E ) parameter: V G E = 0 V , f = 1 MHz 10 2 C 10 1 C is s C os s C rs s 5 10 15 20 25 30 QGate V VCE 40 R evers e bias ed s afe operating area I C puls = f(V C E ) , T j = 150C parameter: V G E = 15 V 2.5 S hort c irc uit s afe operating area I C s c = f(V C E ) , T j = 150C parameter: V G E = 15 V , tS C 10 s , L < 25 nH 12 IC puls /I C IC sc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VC E 0 0 200 400 600 800 1000 1200 V 1600 VC E Sirectifier R SII200N12 NPT IGBT Modules T yp. s witc hing time I = f (IC ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , R G = 4.7 10 4 T yp. s witc hing time t = f (R G ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , I C = 200 A 10 4 ns ns t 10 3 t 10 3 tdoff tdoff tdon tr 10 2 tdon tr tf 10 2 tf 10 1 0 100 200 300 A 500 10 1 0 10 20 30 40 IC 60 RG T yp. s witc hing los s es E = f (IC ) , inductive load , T j = 125C par.: V C E = 600 V , V G E = 15 V , R G = 4.7 100 mWs T yp. s witc hing los s es E = f (R G ) , inductive load , T j = 125C par.: V C E = 600V , V G E = 15 V , I C = 200 A 100 E on E on E mWs 80 70 60 E 80 70 60 50 40 30 20 10 0 0 E off 50 40 30 20 10 0 0 E off 100 200 300 A 500 10 20 30 40 IC 60 RG Sirectifier R SII200N12 NPT IGBT Modules F orward c harac teris tic s of fas t rec overy revers e diode IF = f(V F ) parameter: T j 400 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode A K/W ZthJC IF 300 10 -1 250 T j=125C 200 T j=25C 10 -2 D = 0.50 0.20 150 10 -3 single pulse 50 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 0.10 0.05 0.02 0.01 100 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Sirectifier R |
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